? IRFP4868PBF 1 www.irf.com ? 2012 international rectifier october 30, 2012 applications ? high efficiency synchronous rectification in smps ? uninterruptible power supply ? high speed power switching ? hard switched and high frequency circuits benefits ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche soa ? enhanced body diode dv/dt and di/dt capability ? lead-free ? gate drain source g d s v dss 300v r ds(on) typ. 25.5m ? max. 32m ? i d 70a base part number package type standard pack orderable part number ?? form quantity ? IRFP4868PBF to-247ac tube 25 IRFP4868PBF absolute maximum ratings ??? symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 70 a i d @ t c = 100c continuous drain current, v gs @ 10v 49 i dm pulsed drain current ? 280 p d @t c = 25c maximum power dissipation 517 w linear derating factor 3.4 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 175 c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10lbf ? in (1.1n ? m) avalanche characteristics ??? e as (thermally limited) single pulse avalanche energy ? 1093 mj i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ? mj thermal resistance ??? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.29 r ? cs case-to-sink, flat greased surface 0.24 ??? c/w r ? ja junction-to-ambient ??? 40 ? to-247ac d g d s
? IRFP4868PBF 2 www.irf.com ? 2012 international rectifier october 30, 2012 static @ t j = 25c (unless otherwise specified) ? ??? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 300 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.29 ??? v/c reference to 25c, i d = 5ma ? r ds(on) static drain-to-source on-resistance ??? 25.5 32 m ? v gs = 10v, i d = 42a ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds = 300v, v gs = 0v ??? ??? 250 v ds = 300v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g internal gate resistance ??? 1.1 ??? ?? dynamic @ t j = 25c (unless otherwise specified) ? ??? symbol parameter min. typ. max. units conditions gfs forward transconductance 80 ??? ??? s v ds = 50v, i d = 42a q g total gate charge ??? 180 270 nc i d = 42a q gs gate-to-source charge ??? 60 ??? v ds =150v q gd gate-to-drain ("miller" ) charge ??? 57 ??? v gs = 10v ? q sync total gate charge sync. (q g - q gd ) ??? 123 ??? i d = 42a, v ds =0v, v gs = 10v t d(on) turn-on delay time ??? 24 ??? ns v dd = 195v t r rise time ??? 16 ??? i d = 42a t d(off) turn-off delay time ??? 62 ??? r g = 1.0 ? t f fall time ??? 45 ??? v gs = 10v ? c iss input capacitance ??? 10774 ??? pf v gs = 0v c oss output capacitance ??? 612 ??? v ds = 50v c rss reverse transfer capacitance ??? 193 ??? ? = 1.0 mhz, see fig. 5 c oss eff. (er) effective output capacitance (energy related) ? ??? 406 ??? v gs = 0v, v ds = 0v to 240v ? , see fig. 11 c oss eff. (tr) effective output capacitance (time related) ? ??? 710 ??? v gs = 0v, v ds = 0v to 240v ? diode characteristics ? ??? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 70 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 280 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 42a, v gs = 0v ? t rr reverse recovery time ??? 351 ??? ns t j = 25c ??? 454 ??? t j = 125c q rr reverse recovery charge ??? 2520 ??? nc t j = 25c ??? 3686 ??? t j = 125c i rrm reverse recovery current ??? 16 ??? a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) dv/dt peak diode recovery ? ??? 7.3 ??? v/ns t j = 25c, i s = 42a, v ds = 300v notes: ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 1.2mh r g = 50 ? , i as = 42a, v gs =10v. part not recommended for use above this value. ? isd 42a, di/dt 1706a/s, v dd v (br)dss , t j 175c. ? pulse width 400s; duty cycle 2%. ? coss eff. (tr) is a fixed capacitance that gives the same charging time as coss while v ds is rising from 0 to 80% v dss . ? coss eff. (er) is a fixed capacitance that gives the same energy as coss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? r ? jc value shown is at time zero. d s g v r = 255v, i f = 42a di/dt = 100a/s ?
? IRFP4868PBF 3 www.irf.com ? 2012 international rectifier october 30, 2012 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.75v ? 60s pulse width tj = 175c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 4.75v fig 2. typical output characteristics 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v ? 60s pulse width fig 3. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 4.75v ? 60s pulse width tj = 25c 4.75v fig 1. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 70a v gs = 10v fig 4. normalized on-resistance vs. temperature 0 30 60 90 120 150 180 210 240 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v v ds = 60v i d = 42a fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical capacitance vs. drain-to-source voltage
? IRFP4868PBF 4 www.irf.com ? 2012 international rectifier october 30, 2012 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 280 290 300 310 320 330 340 350 360 370 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc fig 8. maximum safe operating area 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) -50 0 50 100 150 200 250 300 350 v ds, drain-to-source voltage (v) 0.0 5.0 10.0 15.0 20.0 e n e r g y ( j ) fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 1000 2000 3000 4000 5000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 11a 20a bottom 42a fig 10. drain-to-source breakdown voltage 0.0 0.5 1.0 1.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig 7. typical source-to-drain diode forward voltage fig 12. maximum avalanche energy vs. drain current fig 11. typical coss stored energy
? IRFP4868PBF 5 www.irf.com ? 2012 international rectifier october 30, 2012 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs. pulsewidth notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of tjmax. this is validated for every part type. 2. safe operation in avalanche is allowed as long as tjmax is not exceeded. 3. equation below based on circui t and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction te mperature, not to exceed tjmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 42a fig 15. maximum avalanche energy vs. temperature
? IRFP4868PBF 6 www.irf.com ? 2012 international rectifier october 30, 2012 0 200 400 600 800 1000 di f /dt (a/s) 10 20 30 40 50 60 70 i r r m ( a ) i f = 28a v r = 255v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 2000 3000 4000 5000 6000 q r r ( n c ) i f = 28a v r = 255v t j = 25c t j = 125c fig. 17 typical recovery current vs. di f /dt 0 200 400 600 800 1000 di f /dt (a/s) 2000 3000 4000 5000 6000 7000 8000 q r r ( n c ) i f = 42a v r = 255v t j = 25c t j = 125c fig 18. typical recovery current vs. di f /dt fig 19. typical stored charge vs. di f /dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 10 20 30 40 50 60 70 80 90 i r r m ( a ) i f = 42a v r = 255v t j = 25c t j = 125c fig. 16 threshold voltage vs. temperature fig 20. typical stored charge vs. di f /dt
? IRFP4868PBF 7 www.irf.com ? 2012 international rectifier october 30, 2012 fig 21. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit fig 23a. switching time test circuit fig 23b. switching time waveforms fig 24a. gate charge test circuit fig 24b. gate charge waveform
? IRFP4868PBF 8 www.irf.com ? 2012 international rectifier october 30, 2012 to-247ac package outline dimensions are shown in millimeters (inches) 2x c "a" "a" e e2/2 q e2 2x l1 l d a e 2x b2 3x b lead tip see view "b" b4 b a ? .010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a view: "b" section: c-c, d-d, e-e (b, b2, b4) (c) base meta l plating view: "a" - "a" year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247 package is not recommended for surface mount application.
? IRFP4868PBF 9 www.irf.com ? 2012 international rectifier october 30, 2012 data and specifications subject to change without notice. ir world headquarters: 101n sepulveda., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines ) moisture sensitivity level to-247ac n/a rohs compliant yes ? ? ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be avail able should the user have such requirements. please contact your international rect ifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release.
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